汞改性硒锑系非晶薄膜的结构研究

V. M. Rubish, M. M. Pop, R.P. Pisak, L. Makar, M. Durkot, A.M. Solomon, O.O. Spesyvykh, V. Boryk, R. Dzumedzey
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引用次数: 1

摘要

利用 X 射线衍射仪和拉曼光谱法研究了硒化锑体系汞改性无定形薄膜的结构。结果表明,薄膜在汞蒸气中暴露后在无定形基质中形成的相的结构与立方改性结晶硒化汞的结构一致。利用 X 射线衍射仪和拉曼光谱研究了名义纯的和汞修饰的 Se100Sbx(x = 3、5、7、9)无定形薄膜的结构。结果表明,标称纯薄膜的基体主要由 Se8 环和 Sen 螺旋链元素构成,并含有一定数量的 SbSe3/2 结构基团。将薄膜暴露在汞蒸气中会在其近表面层形成立方修饰的硒化汞(HgSe)晶体夹杂物,并激活薄膜主体中三方修饰的硒晶体夹杂物的形成和生长过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural Studies of Mercury-Modified Amorphous Films of the Selenium-Antimony System
The structure of mercury-modified amorphous films of the Se-Sb system was studied using the methods of X-ray diffractometry and Raman spectroscopy. It was ascertained that the structure of the phase that formed in the amorphous matrix of the films after their exposure in mercury vapor corresponds to the structure of crystalline mercury selenide in cubic modification. The structure of nominally pure and mercury-modified amorphous Se100Sbx films (x = 3, 5, 7, 9) was investigated using X-ray diffractometry and Raman spectroscopy. It is shown that the matrix of nominally pure films is built mainly by elements of Se8 rings and Sen helical chains and contains a certain number of SbSe3/2 structural groups. Exposure of the films in mercury vapor leads to formation of mercury selenide (HgSe) crystalline inclusions in the cubic modification in their near-surface layers, as well as to the activation of the process of formation and growth of Se crystalline inclusions of the trigonal modification in the film bulk.
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