电磁带隙结构中的偏移量效应和模型

IF 3.5 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Luohao Liu;Fan Yang;Shenheng Xu;Maokun Li
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引用次数: 0

摘要

通孔是电磁带隙(EBG)结构设计中的重要组成部分。本文研究了蘑菇状 EBG 结构中通孔的影响,并提出了通孔的等效电路模型。结果表明,当蘑菇状结构中的通孔偏移时,元件反射相位将在 720 度范围内变化,而非传统设计中的 360 度相位范围。这种现象可以用引入互感的新电路模型来解释,并通过该模型定量分析蘑菇状 EBG 结构的相应电磁特性。此外,本文还讨论了该模型的适用性和误差分析。通过理论建模和分析,可以对类似 EBG 结构中的通孔功能进行有效而深入的探讨,同时也为基于 EBG 结构的反射和传输单元的设计提供了更多的理论指导和帮助。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects and Models of Offset-Via in Electromagnetic Band Gap Structure
Via is an essential component in the design of an Electromagnetic Band Gap (EBG) structure. This paper investigates the effects of the via in a mushroom-like EBG structure and proposes an equivalent circuit model of the via. It is revealed that when the via in the mushroom-like structure is offset, the element reflection phase will vary within 720 degrees instead of 360 degrees phase range in a conventional design. This phenomenon can be explained by a new circuit model that introduces a mutual inductance, and the corresponding electromagnetic properties of mushroom-like EBG structure can be quantitatively analyzed by this model. In addition, the applicability and error analysis of the model are discussed in this paper. The theoretical modeling and analysis enable an efficient and in-depth exploration of the via functions in similar EBG structures, and also provide more theoretical guidance and assistance for the design of reflection and transmission units based on EBG structure.
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来源期刊
CiteScore
6.50
自引率
12.50%
发文量
90
审稿时长
8 weeks
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