利用带有缺陷石墨烯的扩散式忆阻器改善人工神经元应用的功耗和积分/点火特性的线性度

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-02-25 DOI:10.1016/j.sse.2024.108892

Moonkyu Song, Sangheon Lee, S.S. Teja Nibhanupudi, Siyu Wu, Sanjay K. Banerjee

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引用次数: 0

摘要

研究人员利用有缺陷的石墨烯夹层，研究了用导电金属桥接随机存取存储器（RAM）制造的扩散式忆阻器，以实现人工神经元的低功耗和线性积分/发射特性。利用这种方法，一种含银的易失性人工神经元表现出了银基器件固有的持续低功耗特性，同时还通过精确控制开/关电流比和导电丝溶解时间实现了尖峰发生的线性。这种方法能够精确调整神经元的行为，并为神经形态计算和人工智能提供了潜在应用。

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Improvement of power consumption and linearity of integrate/fire characteristics using diffusive memristors with defective graphene for artificial neuron application

Diffusive memristors made with conductive metal bridge random access memories (RAMs) have been studied for low power consumption and linearity of integrate/fire characteristics of artificial neurons by using a defective graphene interlayer. Utilizing this approach, a volatile artificial neuron incorporating Ag demonstrates sustained low-power characteristics inherent to Ag-based devices, accompanied by linearity in spike occurrence through precise control of on/off-current ratio and conductive filament dissolution time. This approach enables the precise tuning of the neuron's behavior and offers potential applications in neuromorphic computing and artificial intelligence.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.