用微弧氧化法制备铝基多孔 Al2O3 湿度敏感薄膜传感器

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2024-02-08 DOI:10.1080/10584587.2023.2296321

Junqing Xing, Meiqi Xu, Kangcai Xu, Chengtao Yang

引用次数: 0

摘要

为了提高湿敏传感器的稳定性、灵敏度和响应速度，采用微弧氧化工艺实现了多孔Al2O3结构湿敏传感器的制备。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Preparation of Aluminum-Based Porous Al2O3 Humidity-Sensitive Thin Film Sensors by Microarc Oxidation

In order to improve the stability, and sensitivity and response speed of moisture-sensitive sensors, the microarc oxidation process is used to realize the preparation of porous Al2O3 structure humi...

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.