缺硫对 Ga1.29In3.38S7 结构和超结构特征的影响

IF 0.6 4区 材料科学 Q4 CRYSTALLOGRAPHY
M. G. Kyazumov, S. M. Rzayeva, A. S. Avilov
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引用次数: 0

摘要

Abstract The crystal structure of the 3R polytype with the lattice parameters а = 3.82 Å, с = 63.41 Å, sp. gr.R3m,并建立了 TO\({{\bar {text\{T}}}}\)POOP 结构类型(T 和 \({\bar {text\{T}}}}\) 是相对定向的四面体层,O 是八面体层,P 是部分填充的包间层)。此外,还建立了超晶格周期为А1,2 = \(\sqrt 7 \)а的超结构,这种超结构是由于 OOP 包中的铟占据了每个八面体的 6/7 而形成的;还建立了超晶格周期为А3 = 2а的超结构,这种超结构是由于在 TO({{\bar {\\{T}}}}\ )P 包所包含的八面体上分布了 3/4 的铟原子和 1/4 的空位而形成的。研究表明,样品中不同的硫含量会导致TO({\bar {text\{T}}}})P包八面体层中阳离子的过量和上层结构的破坏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effect of Sulfur Deficiency on the Structural and Superstructural Features of Ga1.29In3.38S7

Effect of Sulfur Deficiency on the Structural and Superstructural Features of Ga1.29In3.38S7

Effect of Sulfur Deficiency on the Structural and Superstructural Features of Ga1.29In3.38S7

The crystal structure of the 3R polytype with the lattice parameters а = 3.82 Å, с = 63.41 Å, sp. gr. R3m, and the TO\({{\bar {\text{T}}}}\)POOP structural type (T and \({{\bar {\text{T}}}}\) are oppositely oriented tetrahedral layers, O are octahedral layers, P are partially filled interpacket layers) has been established. Superstructures with superlattice period А1,2 = \(\sqrt 7 \)а, formed as a result of occupation of 6/7 of each octahedron with indium in the OOP packet, and a superstructure with the superlattice period А3 = 2а, formed by the distribution of 3/4 of In atoms and 1/4 vacancies over the octahedra included in the TO\({{\bar {\text{T}}}}\)P packet, are also established. It is shown that the different sulfur content in the samples leads to a different excess of cations in the octahedral layers of the TO\({{\bar {\text{T}}}}\)P packets and destruction of the superstructure.

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来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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