电荷域积聚型 TDI CMOS 图像传感器中的质子位移损伤效应研究

IF 1.1 4区物理与天体物理 Q3 NUCLEAR SCIENCE & TECHNOLOGY

Radiation Effects and Defects in Solids Pub Date : 2024-02-13 DOI:10.1080/10420150.2024.2311826

Yi Jiang, Lin Wen, Jie Feng, Zitao Zhao, Zhikang Yang, Changsong Shi, Rui Li, Yudong Li, Dong Zhou, Qi Guo

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引用次数: 0

摘要

TDI CMOS 图像传感器是空间地球观测和多光谱成像中应用最广泛的光电探测器。在太空环境中，高能质子辐照造成的位移损伤会对传感器的性能产生影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Research on proton displacement damage effects in charge-domain accumulation type TDI CMOS image sensors

TDI CMOS image sensors are the most widely used photodetectors in space earth observation and multispectral imaging. The displacement damage caused by high-energy proton irradiation in the space en...

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来源期刊

Radiation Effects and Defects in Solids 物理-核科学技术

CiteScore

1.60

自引率

20.00%

发文量

107

审稿时长

4 months

期刊介绍： The Journal covers a wide range of topics under radiation and plasma sciences. The range of contributions encompasses: radiation physics; radiochemistry, radiobiology and physical effects of medical irradiation, including research on radiative cell degeneration; optical, electrical and mechanical effects of radiation, and their secondary effects such as diffusion and particle emission from surfaces; plasma techniques and plasma phenomena. On plasma science the Journal covers all areas of fusion, space and low temperature plasmas.