通过正交试验分析水平单晶片反应器中硅外延生长的影响因素

IF 1.5 4区 材料科学 Q3 Chemistry
Chaozhong Li, Chengshuai Li, Hang Jiang, Hao Chen, Haisheng Fang
{"title":"通过正交试验分析水平单晶片反应器中硅外延生长的影响因素","authors":"Chaozhong Li,&nbsp;Chengshuai Li,&nbsp;Hang Jiang,&nbsp;Hao Chen,&nbsp;Haisheng Fang","doi":"10.1002/crat.202300237","DOIUrl":null,"url":null,"abstract":"<p>Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high-quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non-uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane-hydrogen (TCS-H<sub>2</sub>) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non-uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non-uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non-uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single-Wafer Reactor through Orthogonal Test\",\"authors\":\"Chaozhong Li,&nbsp;Chengshuai Li,&nbsp;Hang Jiang,&nbsp;Hao Chen,&nbsp;Haisheng Fang\",\"doi\":\"10.1002/crat.202300237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high-quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non-uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane-hydrogen (TCS-H<sub>2</sub>) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non-uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non-uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non-uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.</p>\",\"PeriodicalId\":48935,\"journal\":{\"name\":\"Crystal Research and Technology\",\"volume\":\"59 2\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-01-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystal Research and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/crat.202300237\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Chemistry\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Research and Technology","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/crat.202300237","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Chemistry","Score":null,"Total":0}
引用次数: 0

摘要

硅外延是半导体制造中沉积高质量硅薄膜的关键工艺。这项技术被广泛应用于集成电路的生产中,因为它能制造出具有更高性能特征的复杂电子结构。本研究对化学气相沉积(CVD)反应器进行了数值模拟,以探索工艺参数对硅生长速度和不均匀性的影响。研究涵盖了三氯硅烷-氢(TCS-H2)体系的气体反应和表面反应。通过改变过程参数,包括吸收体温度、入口气体速度、吸收体旋转速度、入口气体温度、上壁温度和 TCS 分子分数,系统地研究了气体流速、温度和主要成分的分布。此外,还引入了正交试验法来评估所有参数对生长不均匀性的影响。结果表明,入口气体速度和受体温度对生长速率和不均匀性有显著影响。硅生长速率主要受 TCS 分子分数的影响,而衬底的旋转速度主要影响生长的不均匀性。最后,我们提出了最佳方案,为在工业应用中改进硅化学气相沉积工艺提供了宝贵的指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single-Wafer Reactor through Orthogonal Test

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single-Wafer Reactor through Orthogonal Test

Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high-quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non-uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane-hydrogen (TCS-H2) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non-uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non-uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non-uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
2.50
自引率
6.70%
发文量
121
审稿时长
1.9 months
期刊介绍: The journal Crystal Research and Technology is a pure online Journal (since 2012). Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of -crystal growth techniques and phenomena (including bulk growth, thin films) -modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals) -industrial crystallisation -application of crystals in materials science, electronics, data storage, and optics -experimental, simulation and theoretical studies of the structural properties of crystals -crystallographic computing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信