加载粘性非导电液体的平板对声学λ波的辐射吸收分析

IF 0.4 4区 计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
N. A. Ageikin, V. I. Anisimkin, N. V. Voronova, A. V. Smirnov
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引用次数: 0

摘要

摘要实验研究了不同阶次兰姆波时,液体中的辐射损失与压电板表面垂直位移分量U3值的关系。考虑板内相速度Vn大于液体中纵向体积声波速度Vl的波。结果表明,在低U3值时,没有辐射进入液体,即使在Vn >时,辐射损耗值也接近于零;v1,在高U3值时,辐射损失值较大,对于归一化波长厚度为1.75、频率为16.97 MHz的YZ-LiNbO3板中的Lamb波,其辐射损失值达到4 dB/mm,与相同材料表面声波的辐射损失相当。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Analysis of Radiation Absorption of Acoustic Lamb Waves in Plates Loaded with Inviscid Nonconducting Liquid

Analysis of Radiation Absorption of Acoustic Lamb Waves in Plates Loaded with Inviscid Nonconducting Liquid

Abstract

The dependence of radiation losses in a liquid on the value of displacement component U3 normal to the plate on the surface of a piezoelectric plate for Lamb waves of various orders has been experimentally investigated. The waves whose phase velocity Vn in the plate is greater than velocity Vl of the longitudinal volumetric acoustic wave in the liquid are considered. It is shown that at low values of U3, there is no radiation into the liquid and the value of radiation losses is close to zero even at Vn > Vl, at high values of U3, the value of radiation losses is large and for Lamb waves in the YZ–LiNbO3 plate with a normalized wavelength thickness of 1.75 and a frequency of 16.97 MHz, it reaches a value of 4 dB/mm, comparable to the radiation losses of surface acoustic waves in the same material.

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来源期刊
CiteScore
1.00
自引率
20.00%
发文量
170
审稿时长
10.5 months
期刊介绍: Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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