(Pb0.8Ba0.2)[(Zn1/3Nb2/3)0.7Ti0.3]O3铁电陶瓷的储能与弛豫行为

IF 2.1 3区物理与天体物理 Q3 PHYSICS, APPLIED

Journal of Advanced Dielectrics Pub Date : 2023-09-30 DOI:10.1142/s2010135x23500194

A. Pelaiz-Barranco, Y. Perez-Martin, O. Garcia-Zaldivar, Y. Gagou

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引用次数: 1

摘要

(Pb[公式:见文]Ba[公式:见文])[(Zn[公式:见文]Nb[公式:见文])[公式:见文]Ti[公式:见文]]o3弛豫型铁电陶瓷采用经典固相反应制备。在绕铁电弛豫特征冻结温度的遍历准则框架内讨论了磁滞回线的结果。在冰点以下观察到较细的迟滞回线，反映了遍历弛豫行为。在这个温度以上，所研究的体系估计在223 K左右，观察到更大的和不饱和的铁电磁滞回。该温度与最大极化曲线和残余极化曲线拐点的斜率变化一致。在较宽的温度范围内确定了储能、能量损失和效率值。虽然可回收能量密度显示出相对较低的值(0.23[公式:见文]J/ cm3)，但该参数和效率有有趣的行为，因为两个物理量随温度增加，效率甚至达到97%的值。

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Energy storage and relaxor behavior in (Pb_0.8Ba_0.2)[(Zn_1/3Nb_2/3)_0.7Ti_0.3]O₃ ferroelectric ceramic

(Pb[Formula: see text]Ba[Formula: see text])[(Zn[Formula: see text]Nb[Formula: see text])[Formula: see text]Ti[Formula: see text]]O 3 relaxor-type ferroelectric ceramics was obtained via classical solid-state reaction. The hysteresis loop results were discussed in the frame of ergodicity criterium around the characteristic ferroelectric relaxor freezing temperature. Slimer hysteresis loops were observed below the freezing temperature reflecting an ergodic relaxor behavior. Above this temperature, estimated around 223[Formula: see text]K for the studied system, larger and unsaturated like ferroelectric hysteresis loops were observed. This temperature also coincides with the slope change on maximum polarization and inflection point of remnant polarization curves. Energy storage, energy loss and efficiency values were determined in a wide temperature range. While the recoverable energy density shows relatively low values (0.23[Formula: see text]J/cm 3 ), there are interesting behaviors for this parameter and for the efficiency, since the two physical quantities increase versus temperature and the efficiency even reaches the value of 97%.

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来源期刊

Journal of Advanced Dielectrics PHYSICS, APPLIED-

CiteScore

3.80

自引率

6.50%

发文量

审稿时长

18 weeks

期刊介绍： The Journal of Advanced Dielectrics is an international peer-reviewed journal for original contributions on the understanding and applications of dielectrics in modern electronic devices and systems. The journal seeks to provide an interdisciplinary forum for the rapid communication of novel research of high quality in, but not limited to, the following topics: Fundamentals of dielectrics (ab initio or first-principles calculations, density functional theory, phenomenological approaches). Polarization and related phenomena (spontaneous polarization, domain structure, polarization reversal). Dielectric relaxation (universal relaxation law, relaxor ferroelectrics, giant permittivity, flexoelectric effect). Ferroelectric materials and devices (single crystals and ceramics). Thin/thick films and devices (ferroelectric memory devices, capacitors). Piezoelectric materials and applications (lead-based piezo-ceramics and crystals, lead-free piezoelectrics). Pyroelectric materials and devices Multiferroics (single phase multiferroics, composite ferromagnetic ferroelectric materials). Electrooptic and photonic materials. Energy harvesting and storage materials (polymer, composite, super-capacitor). Phase transitions and structural characterizations. Microwave and milimeterwave dielectrics. Nanostructure, size effects and characterizations. Engineering dielectrics for high voltage applications (insulation, electrical breakdown). Modeling (microstructure evolution and microstructure-property relationships, multiscale modeling of dielectrics).