掺杂tm2o3的锌钡硼碲酸盐玻璃的发光和光谱特性

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234561

S. Pantian, W. Sa-ardsin, P. Yasaka, K. Boonin, J. Kaewkhao

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引用次数: 0

摘要

摘要采用传统的熔体淬火工艺制备了掺杂不同浓度Tm2O3的ZnO-BaO-B2O3-TeO2 (ZBBoT)玻璃样品。随后的性质，可能取决于掺杂检查:密度，摩尔体积，折射率，吸收和光致发光。利用吸收光谱计算了Judd-Ofelt (J-O)参数Ωλ， λ = 2,4和6，并给出了Ω2 > Ω6 > Ω4的趋势。这些参数最终被处理，以研究反映这种类型的光学应用玻璃的适当性的性质。发射光谱分别在454和478 nm处提供两个峰，用于几种光学器件。关键词:氧化铥硼碲玻璃发光j - o参数szbbot致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢

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Luminescence and Spectroscopic Characteristics of Zinc Barium Borotellurite Glass Doped with Tm ₂ O ₃ for Optical Applications

AbstractThe conventional melt quenching procedures were followed to fabricate the samples of ZnO-BaO-B2O3-TeO2 (ZBBoT) glass doped with various concentration of Tm2O3. The consequent properties which feasible depend on the dopant were examined: density, molar volume, refractive index, absorption, and photoluminescence. The Judd-Ofelt (J-O) parameters (Ωλ, λ = 2, 4, and 6) were calculated using the absorption spectra and provided the trend of Ω2 > Ω6 > Ω4. These parameters were eventually processed to investigate the properties reflecting the appropriateness of this type of glass for optical applications. The emission spectra individually provide 2 peaks at 454, and 478 nm which are used in several optical devices.Keywords: Thulium oxideboro-tellurite glassluminescenceJ-O parametersZBBoT AcknowledgmentsThe authors would like to thank Thepsatri Rajabhat University for its warm support and Nakornpathom Rajabhat University for its fabulous facilities.

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.