用第一性原理计算评价半赫斯勒合金LiZnX (X = As, P, Sb)能带结构

Emmanuel Ettah, Michael E. Ishaje, Kseniia Minakova, Esther Offiong Asuquo, Stephen U. Odey
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引用次数: 0

摘要

能带结构的评价对理解材料的电子特性起着至关重要的作用。本研究采用基于密度泛函理论(DFT)的第一性原理方法研究了半heusler合金LiZn(X = As, P,和Sb)的能带结构。这些合金因其在热电和自旋电子学器件中的潜在应用而受到特别关注。计算了三组分化合物LiZnX (X=As, P和Sb)对应的态密度(DOS),以及Li, Zn, As, P和Sb轨道在环境压力下对态密度的贡献。这也证实了LiZnX (X=As, P,和Sb)是一种半导体,在费米能级周围的占据区和未占据区之间存在狭窄的带隙。Li -1s, As-4p, As- 4s, Zn-3d轨道贡献最大。在费米能级之前P-1s和P-2p轨道占优势,在费米能级之后Zn-2p轨道占优势。我们观察到优势轨道Sb-1s, Sb-3d, Li-1s, Li-2s, Zn-3d表现出弱杂化和低贡献。这一特征表明这两个原子之间的共价键是弱的,并且可能是计算中观察到的机械不稳定性的原因。同时,计算得到的带结构具有0.625的窄带隙。三组分化合物LiZnX(X=As, P, Sb)及其直接带隙半导体分别为0.937和0.313。获得的能带结构为LiZn (X = As, P, Sb)合金的电子特性提供了有价值的信息。带隙的存在对于热电应用至关重要,因为它表明存在限制电子和空穴的区域,从而实现有效的电荷传输。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EVALUATION OF ENERGY BAND STRUCTURE OF HALF-HEUSLER ALLOY LiZnX (X = As, P, and Sb) USING FIRST PRINCIPLE CALCULATION
The evaluation of energy band structure plays a vital role in understanding the electronic properties of materials. This research, we investigate the energy band structure of Half-Heusler alloys LiZn(X = As, P, and Sb) using a first principle approach based on Density Functional Theory (DFT). These alloys are of particular interest due to their potential applications in thermoelectric and spintronics devices. The corresponding Density of States (DOS) for the tripartite compounds LiZnX (X=As, P, and Sb) have been calculated and the contributions of the Li, Zn, As, P and Sb orbital to the Density of States at ambient pressure. This also confirmed that LiZnX (X=As, P, and Sb) is a semi-conductor with a narrow band-gap between the occupied and unoccupied regions around the Fermi level. The orbitals Li -1s, As-4p, As- 4s, Zn-3d has the highest contributions. The dominant of the orbitals P-1s and P-2p before the Fermi- level and Zn-2p after the Fermi-level are observed. We observed the dominant of the orbitals Sb-1s, Sb-3d, Li-1s, Li-2s, Zn-3d shows weak hybridization and low contribution. This features indicates that the covalent bond between these two atoms is weak, and could be responsible for the mechanical instability observed in the calculation. Meanwhile the band structure calculated and presented has narrow band-gab of 0.625. 0.937 and 0.313 respectively for the tripartite compound LiZnX(X=As, P, and Sb) and its a direct band-gap semiconductor. The obtained energy band structures provide valuable information about the electronic properties of LiZn (X = As, P, and Sb) alloys. The presence of band gaps is crucial for thermoelectric applications, as it indicates the presence of regions where electrons and holes are confined, enabling efficient charge transport.
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