退火温度对碲化镉薄膜光学性能的影响

Q4 Physics and Astronomy
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引用次数: 0

摘要

采用热蒸发法制备了碲化镉纳米颗粒(CdTe NPs),温度为373 K,真空压力为2.7 mPa,制备了厚度为100 nm的薄膜。对制备的薄膜进行了紫外可见光谱(UV-Vis)研究。为了研究退火温度对碲化镉薄膜光学性能的影响,将这些薄膜在323 ~ 373 k温度下进行退火。利用紫外可见光谱法在600 ~ 1600 nm波长范围内记录了薄膜退火前后的光吸收光谱,结果表明,薄膜的光吸收值随着退火温度的升高而增加。经退火后,生长薄膜的光能带隙从1.519 eV减小。tac图的结果表明,退火后能隙减小。消光系数和折射率随光子能量和退火温度的增加而增大。退火后,生长膜的相对密度和电子极化率提高。随着退火温度的升高,得到的介电常数实部和虚部等其他光学参数增大,而表面和体积能量损失函数减小。结果表明,在373 K退火后沉积的碲化镉薄膜具有较好的光学性能,可用于光电子应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Annealing temperature effect on optical properties of cadmium telluride thin films
Cadmium telluride nanoparticles (CdTe NPs) were deposited by the thermal evaporation method on glass substrates at a temperature of 373 K and a vacuum pressure of 2.7 mPa, and thin films with the thickness of 100 nm were fabricated. The prepared films were subjected to ultraviolet-visible (UV-Vis) spectroscopy to study the optical properties of thin films. To investigate the effect of annealing temperature on the optical properties of cadmium telluride thin films, these films were annealed at temperatures (323-373) K. The light absorption spectra of films before and after annealing were recorded using UV-Vis spectroscopy at a wavelength range of 600-1600 nm shows that the value of light absorption by films increased with the increased annealing temperature. The optical energy bandgap of the grown films has a decrement process from 1.519 eV after annealing. The results of the Tauc plot show the decrease in energy bandgap with annealing. Extinction and refractive indices increase with increment of photon energy and annealing temperature. The relative density and electronic polarizability of grown films increase after annealing. Other optical parameters obtained in this work, including the real and imaginary parts of the dielectric constant, increase, while the surface and volume energy loss functions decrease with increase of the annealing temperature. The results of this work indicate that the deposited cadmium telluride thin films annealed at 373 K have better optical properties for photoelectronic applications.
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来源期刊
Iranian Journal of Physics Research
Iranian Journal of Physics Research Physics and Astronomy-Physics and Astronomy (all)
CiteScore
0.20
自引率
0.00%
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审稿时长
30 weeks
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