Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for Improved Optical and Electrical Properties

GaAs/AlGaAs based nanowires are promising candidates for photovoltaic applications due to their high absorption coefficient, low surface reflection, and efficient collection of photogenerated carriers. This study focuses on optimizing the performance of p-i-n GaAs/AlGaAs nanowire solar cell arrays having a radial junction using optoelectronic simulations. The research investigates the optimal doping for the GaAs core and AlGaAs shell, as well as the impact of shell thickness and junction positions on solar cell performance. Additionally, the study examines the effect of various surface effects, including the presence of surface traps, surface recombination velocities, and associated lifetime degradation. Our studies find that a high doping density for the shell and core region is crucial for achieving an appropriate band configuration and carrier extraction. It also highlights that having a larger doping density is more important than having a larger lifetime. Finally, the research examines the effect of different aluminum compositions on photogeneration inside the nanowire and shows that having a high aluminum composition can confine most photogeneration to inner GaAs regions, potentially allowing for thicker AlGaAs shells, which can efficiently prevent surface recombination.