Ag - MoO3薄膜及Ag/MoO3/p-Si结构光电二极管的制备

G. Lavanya, N. Sivanandan
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引用次数: 0

摘要

MoO3已被广泛研究用于从电子到能量存储的各个领域。在玻璃衬底上制备了正交结构的MoO3薄膜。在掺银材料中以Wt%加入不同浓度(1%、3%、5%)的MoO3与MoO3前驱体,采用喷雾热解法合成。x射线衍射结果显示,MoO3的正交结构中含有Ag。FE-SEM图像显示出比agi掺杂MoO3和纯MoO3更多的色散和棒状。采用喷射雾化器喷雾热解技术制备n-Ag: MoO3/p-Si光电二极管,具有良好的响应性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ag Incorporated MoO3 Thin Films and Fabrication of Ag/MoO3/p-Si Structured Photodiode
MoO3 have been widely investigated for their applications ranging from electronics to energy storage. Orthorhombic structured MoO3 thin films were prepared on a glass substrate. The Ag doped materials to add the MoO3 in different concentrations (1%, 3%, 5%) at Wt% with MoO3 precursor and synthesis was done using the spray pyrolysis method. X-ray diffraction revealed the incorporation of Ag in the MoO3 orthorhombic structure. FE-SEM images showed more dispersive and rod shapes than Agi-doped MoO3 and pure MoO3 respectively. The jet nebulizer spray pyrolysis technique for fabrication of n-Ag: MoO3/p-Si photodiodes makes it suitable for good response photo-detecting applications.
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