偏置场自由自旋霍尔纳米振荡器中的可重构神经尖峰

Sourabh Manna, Rohit Medwal, Rajdeep Singh Rawat
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摘要

本文从理论上研究了椭圆型铁磁体(FM)/重金属双层自旋霍尔纳米振荡器(SHNO)在无偏置场条件下的类神经元脉冲动力学,该振荡器非常适合于脑启发计算方案的实际实现。通过控制输入电流的脉冲特性,我们展示了在单个SHNO中具有可调频率的规则周期性尖峰以及漏积起火(LIF)行为。通过调节恒定输入直流电流密度的大小,可以在0.5—0.96 GHz (460 MHz带宽)范围内调节规则周期尖峰的频率。我们进一步证明了响应时变输入的尖峰动力学的可重构性,通过连续增加输入电流密度作为时间的线性函数来实现。宏自旋理论和微磁模拟揭示了我们的SHNO中无偏置场自振荡和尖峰现象的起源。此外,我们还讨论了椭圆调频的形状各向异性如何影响无偏置场的自振荡特性,包括阈值电流、频率以及从面内进动到面外进动的过渡。SHNO运行$<{10}^{12}\phantom{\rule{0.16em}{0ex}}\mathrm{A}/{\mathrm{m}}^{2}$输入电流密度,具有较大的自振荡幅度,保证了高输出功率。结果表明,通过减小调频层的椭圆度和提高垂直磁各向异性可以降低阈值电流密度。这些发现强调了无偏置场的椭圆SHNO在设计高能效的基于尖峰神经元的神经形态硬件方面的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reconfigurable neural spiking in bias field free spin Hall nano-oscillator
In this paper, we theoretically investigate neuronlike spiking dynamics in an elliptic ferromagnet (FM)/heavy metal bilayer-based spin Hall nano-oscillator (SHNO) in a bias field free condition, very suitable for practical realization of brain-inspired computing schemes. We demonstrate regular periodic spiking with tunable frequency as well as the leaky integrate-and-fire (LIF) behavior in a single SHNO by manipulating the pulse features of input current. The frequency of regular periodic spiking is tunable in a range of 0.5--0.96 GHz (460 MHz bandwidth) through adjusting the magnitude of constant input DC current density. We further demonstrate the reconfigurability of spiking dynamics in response to a time-varying input accomplished by continuously increasing the input current density as a linear function of time. Macrospin theory and micromagnetic simulation provide insight into the origin of bias field free auto-oscillation and the spiking phenomena in our SHNO. In addition, we discuss how the shape anisotropy of the elliptic FM influence the bias field free auto-oscillation characteristics, including threshold current, frequency, and transition from in-plane to out-of-plane precession. The SHNO operates $<{10}^{12}\phantom{\rule{0.16em}{0ex}}\mathrm{A}/{\mathrm{m}}^{2}$ input current density and exhibits a large auto-oscillation amplitude, ensuring high output power. We show that the threshold current density can be reduced by decreasing the ellipticity of the FM layer as well as enhancing the perpendicular magnetic anisotropy. These findings highlight the potential of bias field free elliptic SHNO in designing power-efficient spiking neuron-based neuromorphic hardware.
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