一种三相脉宽控制半导体

S. Biswas, B. Basak, M. Swamy
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引用次数: 0

摘要

作者提出了一种新颖的三相脉宽控制半导体拓扑结构,采用新颖的脉宽调制(PWM)控制策略,以降低输入电流和输出电压中的低次谐波含量。该电路在输入端以单位位移因数运行,并使用最小的功率元件。所提出的PWM策略可以在三相半导体桥上实现,只有三个控制开关,从而实现PWM控制整流。虽然电路操作是用强制整流的可控硅开关来解释的,但基本控制的PWM操作对于任何替代控制开关(如GTO或晶体管)都是有效的,这些开关不需要整流功率组件。该电路具有广泛的应用范围,从整流器和电池充电器到电机驱动器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A three-phase pulse width controlled semiconverter
The authors present a novel three-phase pulse-width-controlled semiconverter topology, using a novel PWM (pulse-width modulation) control strategy in order to reduce the low-order harmonic content in both the input current and the output voltage. The circuit operates with unity displacement factor at its input and uses minimum power components. The proposed PWM strategy allows its implementation on a three-phase semiconverter bridge with only three controlled switches, so as to obtain PWM controlled rectification. Although the circuit operation is explained with force commutated SCR switches, the basic controlled PWM operation is valid for any alternative controlled switches, such as GTO or transistors, which do not require the commutating power components. The circuit has wide applications ranging from rectifiers and battery chargers to motor drives.<>
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