128.76 ~ 129.56 GHz 65nm CMOS基频电压控制振荡器

2019 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT) Pub Date : 2019-08-01 DOI:10.1109/ucmmt47867.2019.9008284

G. Su, Dirong Chen, Kaixuan Pang, Hai-jun Gao, Jiangtao Su, Lingling Sun

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引用次数: 1

摘要

本文设计了一种128.76GHz-129.56GHz基频电压控制振荡器(VCO)。采用一种改进型变压器耦合谐振槽，由基于变压器的开关电感和采用共阴极结构的差分变容管组成，实现了差分变容管的高品质因数，提高了该压控振荡器的调谐范围。该VCO采用65nm CMOS工艺制造。它从1.4 V电源消耗11.2 mW。测量结果表明，调谐范围为0.8 GHz，输出功率范围为−11.8 dBm ~−10.6 dBm。

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A 128.76-129.56 GHz Fundamental Voltage Control Oscillator in 65 nm CMOS

A 128.76GHz-129.56GHz fundamental voltage control oscillator (VCO) is presented in this paper. An improved transformer-coupled resonant tank that consists a transformer-based switch inductor and a differential varactor using the common-cathode structure is used to achieve the high quality factor of the differential varactor and improve the tuning range of this VCO. This VCO is fabricated on 65 nm CMOS process. It consumes 11.2 mW from a 1.4 V supply. The measurement results show that the tuning range is 0.8 GHz and the output power ranges from −11.8 dBm to −10.6 dBm.

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2019 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT)

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