提出了一种在300 K下提取完全耗尽SOI nMOSFET上LDD掺杂浓度的新方法

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 1900-01-01 DOI:10.1109/ICCDCS.2000.869841

A. S. Nicolett, J. Martino, E. Simoen, C. Claeys

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引用次数: 4

摘要

我们提出了一种简单的方法来提取与完全耗尽SOI mosfet中LDD(轻掺杂漏极)区域相关的有效掺杂浓度。LDD结构MOSFET的串联电阻由不同的元件组成，其中LDD串联电阻占主导地位。该方法利用了后极电压对LDD区域下方后界面的影响。使用MEDICI模拟来支持分析。

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A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K

We present a simple method to extract the effective doping concentration related to the LDD (Lightly Doped Drain) regions in fully depleted SOI MOSFETs. The series resistance of an LDD structure MOSFET is composed of different components, the LDD series resistance, being the dominant one. The proposed method uses the back gate voltage influence on the back interface below the LDD region. MEDICI simulations were used to support the analysis.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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