FIND随机随机存储器阵列中随机电报噪声的温度和应力效应

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-01 DOI:10.1109/VLSI-TSA.2018.8403834

Chin Yuan Chen, C. Lin, Y. King

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引用次数: 1

摘要

本文对FinFET介电RRAM (FIND RRAM)器件读电流中的随机电报噪声(RTN)信号进行了观察。发现FIND RRAM单元的RTN信号随应力和环境温度而变化。循环应激越强的细胞呈现RTN信号的倾向越强。通过高温退火，FIND细胞中的RTN信号一般可以得到缓解，提出并论证了一种片上退火方案。

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Temperature and stress effect of random telegraph noise in FIND RRAM arrays

An observation on random telegraph noise (RTN) signal in the read current of a FinFET Dielectric RRAM (FIND RRAM) device is presented in this work. The RTN signal of a FIND RRAM cell is found to change with stress and ambient temperature. Cells with more cycling stress show a stronger tendency to exhibit RTN signals. RTN signals in FIND cells can be generally alleviated by high temperature anneal, and an on chip annealing scheme is proposed and demonstrated.

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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