图案衬底上的多波长VCSEL阵列

Wupen Yuen, G.S. Li, C. Chang-Hasnain
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引用次数: 0

摘要

VCSEL的激光波长主要由有效腔厚度决定,有效腔厚度可以通过改变/spl λ /-间隔层或DBR层的厚度来改变。在制作毫米级vcsel阵列方面已经做了很多努力,其中探索了不同的方法来改变有效腔厚度。在所有这些方法中,图案衬底MBE生长是一种非常有吸引力的方法,因为只需要一次生长,并且可以通过原位监测实现宽而精确的波长跨度。本文综述了两种图案化衬底方法。两者都可以同时实现宽/spl λ /间距、高产和高性能。讨论了两种方法的比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multiple-wavelength VCSEL arrays on patterned substrates
The lasing wavelength of a VCSEL is primarily determined by the effective cavity thickness which can be varied by changing the thickness of the /spl lambda/-spacer or the DBR layers. There have been many efforts in making MW-VCSEL arrays, where different methods of varying the effective cavity thickness were explored. Among all these methods, patterned-substrate MBE growth presents a very attractive approach since only a single growth is necessary and wide and accurate wavelength spans can be achieved with in-situ monitoring. In this paper, we review two patterned substrate methods. Both lead to simultaneous achievements of wide /spl lambda/ spacing, high yield and high performance. The comparison between the two methods is discussed.
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