一种超低功耗电容式传感器接口的纳米双模1-V频率基准

M. Paavola, M. Saukoski, M. Laiho, K. Halonen
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引用次数: 8

摘要

提出了一种采用0.25 μ m BiCMOS工艺设计的用于超低功耗电容式传感器接口的纳米级CMOS频率基准。由于电源电压低至1 V,采用基于源耦合CMOS多振子的两个并联频率参考来实现所需的两种工作模式。在模式1中,当驱动24.6 kHz的1pf电容性负载时,参考频率消耗210na。在模式2中,驱动307.2 kHz的相同负载分别消耗660 nA。在模式1和模式2的温度和电源电压范围内,典型的模拟频率稳定度分别为plusmn10.7%和plusmn6.1%。模式1中10 kHz偏置频率和模式2中100 kHz偏置频率下的模拟相位噪声分别约为-67 dBc/Hz和-68 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A nanopower double-mode 1-V frequency reference for an ultra-low-power capacitive sensor interface
In this paper, a nanopower CMOS frequency reference designed with a 0.25-mum BiCMOS process for an ultra- low-power capacitive sensor interface is presented. Due to the low supply voltage of 1 V, two parallel frequency references based on source-coupled CMOS multivibrators are used to implement the two required operating modes. In mode 1, when driving a 1 pF capacitive load at 24.6 kHz, the frequency reference consumes 210 nA. In mode 2, driving the same load at 307.2 kHz consumes 660 nA, respectively. Typical simulated frequency stabilities over the temperature and supply voltage ranges in modes 1 and 2 are plusmn10.7% and plusmn6.1 %, respectively. Simulated phase noises at 10 kHz offset frequency in mode 1, and at 100 kHz offset frequency in mode 2, are approximately -67 dBc/Hz and -68 dBc/Hz, respectively.
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