多数载流子浓度永久假设在基于pn结的半导体器件建模中的适应性

A. Baskys
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引用次数: 0

摘要

推导了大多数载流子的边界浓度与pn结电压降之间的关系方程。推导是在玻尔兹曼关系和电荷准中性条件的基础上进行的。所得的方程使我们能够研究多数载流子浓度持久性假设在基于pn结的半导体器件建模中的适应性。用推导方程分析了特殊的硅p-n结。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Adaptability of majority carrier concentration permanence assumption in modelling of the p-n junction-based semiconductor devices
The equations, which relate the boundary concentrations of majority carriers with the voltage drop across the p-n junction, have been derived. The derivation is carried out on the basis of the Boltzmann relations and charge quasi-neutrality conditions. The obtained equations allow us to investigate the adaptability of the majority carrier concentration permanence assumption in modeling of the p-n junction-based semiconductor devices. The particular silicon p-n junctions have been analyzed using derived equations.
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