{"title":"多数载流子浓度永久假设在基于pn结的半导体器件建模中的适应性","authors":"A. Baskys","doi":"10.1109/ESTREAM.2015.7119480","DOIUrl":null,"url":null,"abstract":"The equations, which relate the boundary concentrations of majority carriers with the voltage drop across the p-n junction, have been derived. The derivation is carried out on the basis of the Boltzmann relations and charge quasi-neutrality conditions. The obtained equations allow us to investigate the adaptability of the majority carrier concentration permanence assumption in modeling of the p-n junction-based semiconductor devices. The particular silicon p-n junctions have been analyzed using derived equations.","PeriodicalId":241440,"journal":{"name":"2015 Open Conference of Electrical, Electronic and Information Sciences (eStream)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Adaptability of majority carrier concentration permanence assumption in modelling of the p-n junction-based semiconductor devices\",\"authors\":\"A. Baskys\",\"doi\":\"10.1109/ESTREAM.2015.7119480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The equations, which relate the boundary concentrations of majority carriers with the voltage drop across the p-n junction, have been derived. The derivation is carried out on the basis of the Boltzmann relations and charge quasi-neutrality conditions. The obtained equations allow us to investigate the adaptability of the majority carrier concentration permanence assumption in modeling of the p-n junction-based semiconductor devices. The particular silicon p-n junctions have been analyzed using derived equations.\",\"PeriodicalId\":241440,\"journal\":{\"name\":\"2015 Open Conference of Electrical, Electronic and Information Sciences (eStream)\",\"volume\":\"146 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Open Conference of Electrical, Electronic and Information Sciences (eStream)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESTREAM.2015.7119480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Open Conference of Electrical, Electronic and Information Sciences (eStream)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESTREAM.2015.7119480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Adaptability of majority carrier concentration permanence assumption in modelling of the p-n junction-based semiconductor devices
The equations, which relate the boundary concentrations of majority carriers with the voltage drop across the p-n junction, have been derived. The derivation is carried out on the basis of the Boltzmann relations and charge quasi-neutrality conditions. The obtained equations allow us to investigate the adaptability of the majority carrier concentration permanence assumption in modeling of the p-n junction-based semiconductor devices. The particular silicon p-n junctions have been analyzed using derived equations.