FD-SOI材料使CMOS技术从65nm突破到12nm及以上

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-01 DOI:10.1109/ICICDT.2017.7993499

W. Schwarzenbach, M. Sellier, Bich-Yen Nguyen, C. Girard, C. Maleville

{"title":"FD-SOI材料使CMOS技术从65nm突破到12nm及以上","authors":"W. Schwarzenbach, M. Sellier, Bich-Yen Nguyen, C. Girard, C. Maleville","doi":"10.1109/ICICDT.2017.7993499","DOIUrl":null,"url":null,"abstract":"Multiples technology nodes in production are now based on FD-SOI thin film substrates. The development of these substrates has required several technical innovations (SmartCut process adaptation, new metrology introduction), which are discussed in this paper.","PeriodicalId":382735,"journal":{"name":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","volume":"414 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"FD-SOI material enabling CMOS technology disruption from 65nm to 12nm and beyond\",\"authors\":\"W. Schwarzenbach, M. Sellier, Bich-Yen Nguyen, C. Girard, C. Maleville\",\"doi\":\"10.1109/ICICDT.2017.7993499\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multiples technology nodes in production are now based on FD-SOI thin film substrates. The development of these substrates has required several technical innovations (SmartCut process adaptation, new metrology introduction), which are discussed in this paper.\",\"PeriodicalId\":382735,\"journal\":{\"name\":\"2017 IEEE International Conference on IC Design and Technology (ICICDT)\",\"volume\":\"414 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Conference on IC Design and Technology (ICICDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2017.7993499\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2017.7993499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

生产中的多个技术节点现在基于FD-SOI薄膜衬底。这些基板的发展需要一些技术创新(SmartCut工艺的适应，新的计量方法的引入)，这在本文中进行了讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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FD-SOI material enabling CMOS technology disruption from 65nm to 12nm and beyond

Multiples technology nodes in production are now based on FD-SOI thin film substrates. The development of these substrates has required several technical innovations (SmartCut process adaptation, new metrology introduction), which are discussed in this paper.

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来源期刊

2017 IEEE International Conference on IC Design and Technology (ICICDT)

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