AgTa0.5Nb0.5O3薄膜变容体在不同衬底上的微波性能

Jang-Yong Kim, A. Grishin
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引用次数: 0

摘要

采用脉冲激光沉积技术在LaAIO3(001)、蓝宝石(Al2O3-011_2, r-cut)单晶衬底和康宁7059玻璃上烧结了400 nm厚的AgTa0.5Nb0.5O3 (ATN)薄膜。采用光刻技术和金属提升技术制备了可调谐共面波导数字间电容器。利用微波网络分析仪和G-S-G微波探针对变容管进行了片上测试。在1 ~ 40 GHz微波范围内,ATN/LaAIO3电容器具有最高的可调性(~5.8%@20GHz), ATN/Glass具有最佳的平坦色散(-3.9%),ATN/ AI2O3具有最低的正切损耗(~0.06@20GHz)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microwave Properties of AgTa0.5Nb0.5O3 Thin Film Varactors on Various Substrates
AgTa0.5Nb0.5O3 (ATN) 400 nm thick films have been sintered by pulsed laser deposition technique on LaAIO3 (001), sapphire (Al2O3-011_2, r-cut) single crystal substrates and Corning 7059 glass. Photolithography and metal lift-off technique were used to fabricate tunable coplanar waveguide interdigital capacitors (CPWIDCs). On-wafer test of varactors was performed with microwave network analyzer and G-S-G microwave probe. ATN/LaAIO3 capacitors demonstrated the highest tunability (~5.8%@20GHz), ATN/Glass showed the best flat dispersion (-3.9%) and ATN/ AI2O3 showed the lowest loss tangent (~0.06@20GHz) in the microwave range from 1 to 40 GHz.
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