基于40nm CMOS技术的射频宽带可变增益放大器设计

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2020-10-23 DOI:10.1109/ICICM50929.2020.9292215

Xiaotong Lai, Youming Zhang, Xusheng Tang, Junjie Li, F. Huang, N. Jiang

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引用次数: 0

摘要

本文提出了一种基于40nm CMOS技术的宽带可变增益放大器。VGA由两个级联级联放大器组成。普通栅极晶体管用作开关来控制注入谐振器负载的电流，以控制电压增益。在谐振腔内采用开关电容阵列来控制中心频率。VGA的工作频率范围为13.5 GHz ~ 18ghz, 1db带宽为2ghz。增益调谐范围分别为- 14 dB ~ 11 dB和- 6 dB ~ 19 dB，增益分辨率为1.5 dB。输入1db压缩点约为−16dbm。

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A Radio Frequency Wideband Variable Gain Amplifier Design Based on 40nm CMOS Technology

In this paper, a wideband variable gain amplifier based on 40nm CMOS technology is presented. The VGA consists of two cascaded cascode amplifiers. The common gate transistors are used as switches to control the current injected into the resonator load in order to control voltage gain. A switched capacitor array is implemented in the resonator to control center frequency. The VGA has a frequency range of 13.5 GHz to 18 GHz and achieves a 1 dB bandwidth of 2 GHz. The gain tuning range is −14 dB to 11 dB and −6 dB to 19 dB at low and high band, respectively, with a gain resolution of 1.5 dB. The input 1 dB compression point is about −16 dBm.

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2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)

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