{"title":"用于使用复杂数字波形的宽带、高动态范围应用的超高线性E-Mode GaAs PHEMT MMIC放大器的进展","authors":"Ted Heil, Steve Crain","doi":"10.1109/WAMICON.2010.5461853","DOIUrl":null,"url":null,"abstract":"Recent advances in MMIC GaAs PHEMT amplifiers have pushed intermodulation (IM) distortion performance beyond the traditional relationship between intercept point and compressed output power levels making them ideal candidates for use in broadband digital transmission using complex modulation such as OFDM and QAM. Single-ended and push-pull structures have improved IP3 and IP2 performance; however, real benefits are exemplified when characterized for ACPR, EVM and MER. This paper will discuss the performance of a variety of MMIC amplifier designs based upon E-Mode PHEMT technology and the method to characterize these amplifiers for applications that employ complex digital modulation","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advances in ultra-high linearity E-Mode GaAs PHEMT MMIC amplifiers for use in broadband, high dynamic range applications using complex digital waveforms\",\"authors\":\"Ted Heil, Steve Crain\",\"doi\":\"10.1109/WAMICON.2010.5461853\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent advances in MMIC GaAs PHEMT amplifiers have pushed intermodulation (IM) distortion performance beyond the traditional relationship between intercept point and compressed output power levels making them ideal candidates for use in broadband digital transmission using complex modulation such as OFDM and QAM. Single-ended and push-pull structures have improved IP3 and IP2 performance; however, real benefits are exemplified when characterized for ACPR, EVM and MER. This paper will discuss the performance of a variety of MMIC amplifier designs based upon E-Mode PHEMT technology and the method to characterize these amplifiers for applications that employ complex digital modulation\",\"PeriodicalId\":112402,\"journal\":{\"name\":\"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WAMICON.2010.5461853\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WAMICON.2010.5461853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advances in ultra-high linearity E-Mode GaAs PHEMT MMIC amplifiers for use in broadband, high dynamic range applications using complex digital waveforms
Recent advances in MMIC GaAs PHEMT amplifiers have pushed intermodulation (IM) distortion performance beyond the traditional relationship between intercept point and compressed output power levels making them ideal candidates for use in broadband digital transmission using complex modulation such as OFDM and QAM. Single-ended and push-pull structures have improved IP3 and IP2 performance; however, real benefits are exemplified when characterized for ACPR, EVM and MER. This paper will discuss the performance of a variety of MMIC amplifier designs based upon E-Mode PHEMT technology and the method to characterize these amplifiers for applications that employ complex digital modulation
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