GaAs MMIC探针测量和校准技术

J. Penn, C. Moore
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引用次数: 2

摘要

MMlC设计人员有几个选项可用于验证其电路的性能和仿真一致性。它们可以分为两大类:位于探头尖端的校准参考平面或位于与被测设备共面接口的MMIC芯片上的校准参考平面(DUT)。所使用的校准技术确定了测量的参考平面。使用了几种晶圆内和晶圆外校准技术来获得GaAs mmic的测量值。利用晶圆探针站和矢量网络分析仪获得了砷化镓器件的LRM、SOLT和TRL校准测量值。为了在晶圆校准上使用,在GaAs晶圆上设计了开放、短、负载、“短”微带线和“长”微带线。使用这些晶圆上校准标准进行了SOLT和TRL校准。对于晶圆外校准,使用Cascade Microtech阻抗标准基板(ISS)获得第三组测量的LRM校准。为了平衡LRM测量的参考平面与片上TRL和SOLT校准测量,从共面探头到微带的MMlC发射被减去,即去嵌入以平衡参考平面。采用数值方法从LRM测量数据中提取了MMIC发射的近似s参数。所有三种校准技术的设备测量结果非常一致,并且是可重复的。这些嵌入式测量与铸造厂提供的器件模型相比是有利的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
GaAs MMIC Probe Measurements and Calibration Techniques
The MMlC designer has several options available to verify the performance and simulation agreement of his circuits. They can be divided into two basic categories: calibration reference plane at the probe tips or on the MMIC chip at the coplanar interface to the device under test (DUT). The calibration technique used determines the reference plane of the measurements. Several on-wafei and off-wafer calibration techniques were used to obtain measurements of GaAs MMICs. A Wafer Probe station and a vector network analyzer were used to obtain LRM, SOLT, and TRL calibrated measurements of GaAs devices. In order to use on wafer calibration, an open, a short, a load, a "short" microstrip line, and a "long" microstrip line were designed and included on the GaAs wafer. An SOLT and a TRL calibration was performed with these on-wafer calibration standards. For off-wafer calibration, the Cascade Microtech Impedance Standard Substrate (ISS) was used to obtain an LRM calibration for a third set of measurements. To equalize the reference plane of the LRM measurements with the on-wafer TRL and SOLT calibration measurements, the MMlC launches which transition from the coplanar probe to the microstrip were subtracted out, i.e. deembeded to equalize the reference plane. A numerical technique was used to extract the approximate s-parameters of the MMIC launch from LRM measured data. Device measurements with all three calibration techniques closely agreed and were repeatable. These deembeded measurements compared favorably to foundry supplied device models.
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