利用线性阵列的聚SiGe非冷却微辐射热计进行热红外探测

P. de Moor, Y. Creten, C. Goessens, B. Grietens, V. Leonov, J. Vermeiren, C. van Hoof
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引用次数: 7

摘要

本文讨论了将200/spl倍/1和14/spl倍/14小尺寸非冷却微热计阵列的SiGe技术从IMEC转移到xenic,使多SiGe阵列应用于非接触式温度测量、红外光谱、工艺过程监控、质量控制等方面。该阵列表现出优异的均匀性,约100%的像素产率,100%的可操作性,在读出电平时的NETD约为100 mK。这些优点与密封零级微封装的可能性相结合,使SiGe技术成为低成本生产红外阵列的合适技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal infrared detection using linear arrays of poly SiGe uncooled microbolometers
In this paper, we discuss the SiGe technology for uncooled microbolometer arrays of small format, ie 200/spl times/1 and 14/spl times/14, is transferred from IMEC to XenICs allowing of the poly-SiGe arrays for application in non-contact temperature measurements, infrared spectroscopy, technological process monitoring, quality control, etc. The arrays demonstrate an exceptional uniformity, about 100% pixel yield, 100% operability, and a NETD of about 100 mK at a readout level. These advantages combined with a possibility of hermetic zero-level micropacking make the SiGe technology a proper one for the low-cost production of infrared arrays.
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