化学气相沉积法在铜箔上合成大面积单晶石墨烯畴的优化

C. Liang, Wenrong Wang, Tie Li, Yuelin Wang
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引用次数: 2

摘要

本文通过调节生长参数,对传统的化学气相沉积方法在铜箔上合成单晶石墨烯畴进行了优化。这为大面积单晶石墨烯畴生长提供了一种低成本、高产率的方法。通过该方法,在氩气流量为1000sccm、氢气流量为40sccm、低浓度甲烷流量为1.5sccm的条件下,预退火3h,合成了大于10μm的单晶石墨烯畴。利用拉曼光谱、光学显微镜和扫描电镜对合成样品的形貌进行了表征。结果表明,10μm石墨烯畴为单层单晶。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization on the synthesis of large-area single-crystal graphene domains by chemical vapor deposition on copper foils
In this paper, a traditional chemical vapor deposition method for synthesis of single-crystal graphene domains on copper foils was optimized by modulating the growth parameters. This provided us a low-cost and high-yield method for large-area single-crystal graphene domain growth. By this way, single-crystal graphene domains larger than 10μm were synthesized with a gas flow of 1000sccm argon, 40sccm hydrogen and 1.5sccm low-concentration methane for 15min after 3h pre-annealing. The morphologies of as-synthesized samples were characterized by Raman spectrum, optical microscope and scanning electron microscope. The result showed that the 10μm graphene domains were monolayer single crystals.
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