{"title":"GaAs功率mesfet的波形和饱和","authors":"F. Sechi, H. Huang, B. Perlman","doi":"10.1109/EUMA.1978.332550","DOIUrl":null,"url":null,"abstract":"Measurements of voltage and current waveforms in power MESFETs have shown that voltage breakdown of the Schottky barrier is responsible for power saturation and consequent nonlinearity of MESFET amplifiers. Also, high peak drain-gate voltages affect device reliability and noise in FET oscillators.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"120 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Waveforms and Saturation in GaAs Power MESFETs\",\"authors\":\"F. Sechi, H. Huang, B. Perlman\",\"doi\":\"10.1109/EUMA.1978.332550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Measurements of voltage and current waveforms in power MESFETs have shown that voltage breakdown of the Schottky barrier is responsible for power saturation and consequent nonlinearity of MESFET amplifiers. Also, high peak drain-gate voltages affect device reliability and noise in FET oscillators.\",\"PeriodicalId\":429268,\"journal\":{\"name\":\"1978 8th European Microwave Conference\",\"volume\":\"120 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 8th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1978.332550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurements of voltage and current waveforms in power MESFETs have shown that voltage breakdown of the Schottky barrier is responsible for power saturation and consequent nonlinearity of MESFET amplifiers. Also, high peak drain-gate voltages affect device reliability and noise in FET oscillators.
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