新型硫酸/臭氧法光刻胶剥离

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Pub Date : 2001-10-08 DOI:10.1109/ISSM.2001.962948

H. Tomita, M. Sato, S. Nadahara, T. Saitoh

{"title":"新型硫酸/臭氧法光刻胶剥离","authors":"H. Tomita, M. Sato, S. Nadahara, T. Saitoh","doi":"10.1109/ISSM.2001.962948","DOIUrl":null,"url":null,"abstract":"Sulfuric acid (H/sub 2/SO/sub 4/) and ozone (O/sub 3/) mixture process (SOM) with in-situ concentration monitor for O/sub 3/ and peroxyso-di-sulfuric acid (H/sub 2/S/sub 2/O/sub 8/) was developed Ultraviolet spectrometers with 190-200 nm and 254 nm of wavelength were used to detect H/sub 2/S/sub 2/O/sub 8/ and O/sub 3/ dissolved in SOM, respectively. In order to mix H/sub 2/SO/sub 4/ and O/sub 3/ effectively, the O/sub 3/ gas ejectors were jointed to a quartz bath directly. Using SOM process with UV oxidant monitors and O/sub 3/ gas ejectors, heavily dosed resist and dry etched resist could be removed perfectly without dry ashing process.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Photoresist stripping using novel sulfuric/ozone process\",\"authors\":\"H. Tomita, M. Sato, S. Nadahara, T. Saitoh\",\"doi\":\"10.1109/ISSM.2001.962948\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sulfuric acid (H/sub 2/SO/sub 4/) and ozone (O/sub 3/) mixture process (SOM) with in-situ concentration monitor for O/sub 3/ and peroxyso-di-sulfuric acid (H/sub 2/S/sub 2/O/sub 8/) was developed Ultraviolet spectrometers with 190-200 nm and 254 nm of wavelength were used to detect H/sub 2/S/sub 2/O/sub 8/ and O/sub 3/ dissolved in SOM, respectively. In order to mix H/sub 2/SO/sub 4/ and O/sub 3/ effectively, the O/sub 3/ gas ejectors were jointed to a quartz bath directly. Using SOM process with UV oxidant monitors and O/sub 3/ gas ejectors, heavily dosed resist and dry etched resist could be removed perfectly without dry ashing process.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.962948\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

采用硫酸(H/sub -2 /SO/sub - 4/)和臭氧(O/sub - 3/)混合工艺(SOM)对O/sub - 3/和过氧硫酸(H/sub -2 /S/sub -2 /O/sub - 8/)进行了原位浓度监测，采用波长为190 ~ 200 nm和254 nm的紫外分光光度仪分别检测了SOM中溶解的H/sub -2 /S/sub -2 /O/sub - 8/和O/sub - 3/。为了有效地混合H/sub - 2/SO/sub - 4/和O/sub - 3/，将O/sub - 3/气体喷射器直接连接到石英浴中。采用带有UV氧化剂监测器和O/sub - 3/气体喷射器的SOM工艺，无需干灰化处理即可完美去除高剂量抗蚀剂和干蚀刻抗蚀剂。

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Photoresist stripping using novel sulfuric/ozone process

Sulfuric acid (H/sub 2/SO/sub 4/) and ozone (O/sub 3/) mixture process (SOM) with in-situ concentration monitor for O/sub 3/ and peroxyso-di-sulfuric acid (H/sub 2/S/sub 2/O/sub 8/) was developed Ultraviolet spectrometers with 190-200 nm and 254 nm of wavelength were used to detect H/sub 2/S/sub 2/O/sub 8/ and O/sub 3/ dissolved in SOM, respectively. In order to mix H/sub 2/SO/sub 4/ and O/sub 3/ effectively, the O/sub 3/ gas ejectors were jointed to a quartz bath directly. Using SOM process with UV oxidant monitors and O/sub 3/ gas ejectors, heavily dosed resist and dry etched resist could be removed perfectly without dry ashing process.

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来源期刊

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)

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