两种提高离子注入器入射角精度的校准和控制方法

10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295) Pub Date : 1999-09-08 DOI:10.1109/ASMC.1999.798262

R.D. Elzer, P. Oakey, J. Chen, D. Sing

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引用次数: 2

摘要

半导体制造的最新趋势要求使用更高能量的离子注入和更严格的注入角度控制。本文介绍了使用SIMS剖面和ThermaWave ThermaProbe图来确定离子注入器倾斜和扭转方向的精度。

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Two methods for improved accuracy calibration and control of ion implanter incidence angle

Recent trends in semiconductor manufacturing require the use of higher energy ion implantation and tighter implant angle control. This paper describes the use of SIMS profiles and ThermaWave ThermaProbe maps to determine the accuracy of ion implanter tilt and twist orientation.

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10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295)

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