A new prediction model for effects of plasma-induced damage on parameter variations in advanced LSIs

This paper proposes a physics-based variability prediction model integrating the effects of plasma-induced damage (PID) in advanced LSIs. We focus on charging damage to high-k gate dielectrics and physical damage (Si recess by ion bombardment). In addition to gate length-variation which has been discussed so far as a dominant factor for (static) variability, we demonstrate how PID impacts on – increases – the parameter variation (e.g., σVth), by employing both experimental PID data for high-k and Si substrate damage and a Monte Carlo method. The model prediction suggests a considerable increase in parameter variations by PID such as threshold voltage and off-state leakage.