表面球冠阵列氮化镓基LED光提取增强分析

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI:10.1109/NUSOD.2012.6316492

Xiaomin Wang, Kang Li, F. Kong, Zhenming Zhang

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引用次数: 0

摘要

为了提高GaN-LED的光提取效率(LEE)，采用时域有限差分(FDTD)方法对其球面半径和高度等结构参数进行优化。半径为473nm、高度为250nm的GaN球冠六角形阵列在LED表面的光能比平面LED提高了5.7倍，优于全球阵列和纯半球阵列。

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Light extraction enhancement analysis of GaN-based LED with surface spherical crown array

For promoting the light extraction efficiency (LEE) of GaN-LED with nano-spherical hexagonal arrays, finite-difference time-domain (FDTD) method was used for optimizing the structure parameters such as spherical radius and height. The LEE of GaN spherical crown hexagonal array with 473nm radius and 250nm height over the LED surface exhibited 5.7 times enhancement than that of the planar LED, better than the LEE of whole-sphere array and pure-hemisphere array both.

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来源期刊

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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