{"title":"基于JFET紧凑模型的集成八角形霍尔传感器电阻模型","authors":"Milos Skalsky, S. Banas, V. Panko","doi":"10.1109/ICICDT.2017.7993510","DOIUrl":null,"url":null,"abstract":"This paper presents a resistance model of integrated octagonal-shaped Hall sensor device. The nonlinear voltage dependent, temperature and parasitic junction (leakage & capacitance) effects are modeled using JFET compact model. The model topology consists of eight nonlinear resistor models with two types of resistance. This approach reduces the number of model parameters with sustaining high model accuracy and reduces the modeling time significantly. The JFET compact model is available in many commercial SPICE simulators, e.g. Eldo, Spectre or Hspice.","PeriodicalId":382735,"journal":{"name":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A resistance model of integrated octagonal-shaped Hall sensor using JFET compact model\",\"authors\":\"Milos Skalsky, S. Banas, V. Panko\",\"doi\":\"10.1109/ICICDT.2017.7993510\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a resistance model of integrated octagonal-shaped Hall sensor device. The nonlinear voltage dependent, temperature and parasitic junction (leakage & capacitance) effects are modeled using JFET compact model. The model topology consists of eight nonlinear resistor models with two types of resistance. This approach reduces the number of model parameters with sustaining high model accuracy and reduces the modeling time significantly. The JFET compact model is available in many commercial SPICE simulators, e.g. Eldo, Spectre or Hspice.\",\"PeriodicalId\":382735,\"journal\":{\"name\":\"2017 IEEE International Conference on IC Design and Technology (ICICDT)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Conference on IC Design and Technology (ICICDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2017.7993510\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2017.7993510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A resistance model of integrated octagonal-shaped Hall sensor using JFET compact model
This paper presents a resistance model of integrated octagonal-shaped Hall sensor device. The nonlinear voltage dependent, temperature and parasitic junction (leakage & capacitance) effects are modeled using JFET compact model. The model topology consists of eight nonlinear resistor models with two types of resistance. This approach reduces the number of model parameters with sustaining high model accuracy and reduces the modeling time significantly. The JFET compact model is available in many commercial SPICE simulators, e.g. Eldo, Spectre or Hspice.