半导体介电光谱

A. Jonscher
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引用次数: 0

摘要

作者提出了一种用屏蔽跳变模型来解释半导体介电响应的方法,该模型既与大块材料中的水平跃迁有关,也与空间电荷区和界面处的垂直跃迁有关。这似乎是唯一与半导体实验观察总体一致的一般模型,为半导体和类似材料中的电子跃迁性质的理论研究开辟了一个新的领域。它还提供了与固体更一般的介电响应的新解释的联系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dielectric spectroscopy of semiconductors
The author proposes an interpretation of the dielectric response of semiconductors in terms of a screened hopping model relating both to the horizontal transitions in bulk material and to the vertical transitions in space charge regions and at interfaces. This appears to be the only general model consistent with the totality of experimental observations on semiconductors that opens up a new field of theoretical investigations into the nature of electronic transitions in semiconductors and similar materials. It also provides a link with the new interpretation of the more general dielectric response of solids.<>
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