{"title":"双极功率晶体管的技术和设计限制","authors":"V. Strakoš","doi":"10.1109/ISSE.2009.5206928","DOIUrl":null,"url":null,"abstract":"The clarification of effects having negative impact on power transistor performance. The review of demands on parameters of modern bipolar power transistors and main limitations both technological and design are given. Some concepts are proposed for solving of these problems.","PeriodicalId":337429,"journal":{"name":"2009 32nd International Spring Seminar on Electronics Technology","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Technological and design limitations of bipolar power transistors\",\"authors\":\"V. Strakoš\",\"doi\":\"10.1109/ISSE.2009.5206928\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The clarification of effects having negative impact on power transistor performance. The review of demands on parameters of modern bipolar power transistors and main limitations both technological and design are given. Some concepts are proposed for solving of these problems.\",\"PeriodicalId\":337429,\"journal\":{\"name\":\"2009 32nd International Spring Seminar on Electronics Technology\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 32nd International Spring Seminar on Electronics Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSE.2009.5206928\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 32nd International Spring Seminar on Electronics Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSE.2009.5206928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Technological and design limitations of bipolar power transistors
The clarification of effects having negative impact on power transistor performance. The review of demands on parameters of modern bipolar power transistors and main limitations both technological and design are given. Some concepts are proposed for solving of these problems.