一个紧凑的c波段下变频SiP,在金属陶瓷封装中集成了LO

S. Chaturvedi, Manuraj, S. Bhalke, Vijesh Arora, S. L. Badnikar, B. K. Sehgal
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引用次数: 1

摘要

本文介绍了一种采用12mm×12mm表面贴装金属陶瓷封装实现的紧凑型c波段下变频器的设计与开发。通过开发接收器所需的紧凑尺寸的MMIC组件,即双平衡混频器,带片上变容管的电压控制振荡器以及射频和中频放大器,实现了尺寸的减小。所有mmic均采用GAETEC自主研发的0.7μm GaAs MESFET (G7A)技术设计和制造。接收机工作在5.0-6.0 GHz的频率范围内,与接收机的内部LO在4.5 GHz工作时,产生500-1500 MHz频段的下变频信号。接收机的转换增益为27dB,噪声系数为5dB。通过在封装内优化mmic和隔离屏障的EM布局,实现了优于25dB的RF-IF和LO-IF隔离。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A compact C-band down converter SiP with integrated LO in a metal ceramic package
This paper presents the design and development of a compact C-band down converter realized in a 12mm×12mm surface mount metal ceramic package. The size reduction has been achieved by development of compact sized MMIC components required for the receiver, viz., a double balanced mixer, a voltage controlled oscillator with on-chip varactor and RF and IF amplifiers. All the MMICs have been designed and fabricated using indigenously developed 0.7μm GaAs MESFET (G7A) technology at GAETEC. The receiver works in a frequency range of 5.0-6.0 GHz and produces down converted signal in 500-1500 MHz band when beaten with internal LO of the receiver, operated at 4.5 GHz. The conversion gain of the receiver is 27dB with a noise figure of 5dB. The RF-IF and LO-IF isolation of better than 25dB is achieved though EM optimized placement of MMICs and isolation barriers inside the package.
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