S. Chaturvedi, Manuraj, S. Bhalke, Vijesh Arora, S. L. Badnikar, B. K. Sehgal
{"title":"一个紧凑的c波段下变频SiP,在金属陶瓷封装中集成了LO","authors":"S. Chaturvedi, Manuraj, S. Bhalke, Vijesh Arora, S. L. Badnikar, B. K. Sehgal","doi":"10.1109/IMARC.2015.7411416","DOIUrl":null,"url":null,"abstract":"This paper presents the design and development of a compact C-band down converter realized in a 12mm×12mm surface mount metal ceramic package. The size reduction has been achieved by development of compact sized MMIC components required for the receiver, viz., a double balanced mixer, a voltage controlled oscillator with on-chip varactor and RF and IF amplifiers. All the MMICs have been designed and fabricated using indigenously developed 0.7μm GaAs MESFET (G7A) technology at GAETEC. The receiver works in a frequency range of 5.0-6.0 GHz and produces down converted signal in 500-1500 MHz band when beaten with internal LO of the receiver, operated at 4.5 GHz. The conversion gain of the receiver is 27dB with a noise figure of 5dB. The RF-IF and LO-IF isolation of better than 25dB is achieved though EM optimized placement of MMICs and isolation barriers inside the package.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A compact C-band down converter SiP with integrated LO in a metal ceramic package\",\"authors\":\"S. Chaturvedi, Manuraj, S. Bhalke, Vijesh Arora, S. L. Badnikar, B. K. Sehgal\",\"doi\":\"10.1109/IMARC.2015.7411416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and development of a compact C-band down converter realized in a 12mm×12mm surface mount metal ceramic package. The size reduction has been achieved by development of compact sized MMIC components required for the receiver, viz., a double balanced mixer, a voltage controlled oscillator with on-chip varactor and RF and IF amplifiers. All the MMICs have been designed and fabricated using indigenously developed 0.7μm GaAs MESFET (G7A) technology at GAETEC. The receiver works in a frequency range of 5.0-6.0 GHz and produces down converted signal in 500-1500 MHz band when beaten with internal LO of the receiver, operated at 4.5 GHz. The conversion gain of the receiver is 27dB with a noise figure of 5dB. The RF-IF and LO-IF isolation of better than 25dB is achieved though EM optimized placement of MMICs and isolation barriers inside the package.\",\"PeriodicalId\":307742,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMARC.2015.7411416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2015.7411416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A compact C-band down converter SiP with integrated LO in a metal ceramic package
This paper presents the design and development of a compact C-band down converter realized in a 12mm×12mm surface mount metal ceramic package. The size reduction has been achieved by development of compact sized MMIC components required for the receiver, viz., a double balanced mixer, a voltage controlled oscillator with on-chip varactor and RF and IF amplifiers. All the MMICs have been designed and fabricated using indigenously developed 0.7μm GaAs MESFET (G7A) technology at GAETEC. The receiver works in a frequency range of 5.0-6.0 GHz and produces down converted signal in 500-1500 MHz band when beaten with internal LO of the receiver, operated at 4.5 GHz. The conversion gain of the receiver is 27dB with a noise figure of 5dB. The RF-IF and LO-IF isolation of better than 25dB is achieved though EM optimized placement of MMICs and isolation barriers inside the package.