Al/sup 3+/和Yb/sup 3+/离子发出的强室温近红外辐射在硅表面共注入SiO/sub 2/薄膜

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416654

J. Zhang, B. Cheng, J. Gao, J.Z. Yu, Q.M. Wang

{"title":"Al/sup 3+/和Yb/sup 3+/离子发出的强室温近红外辐射在硅表面共注入SiO/sub 2/薄膜","authors":"J. Zhang, B. Cheng, J. Gao, J.Z. Yu, Q.M. Wang","doi":"10.1109/GROUP4.2004.1416654","DOIUrl":null,"url":null,"abstract":"Intense near infrared emission was observed from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon. It was found that the addition of Al/sup 3+/ ions could remarkably improve the photoluminescence efficiency of Yb/sup 3+/-implanted SiO/sub 2/ film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Intense room temperature near infrared emission from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon\",\"authors\":\"J. Zhang, B. Cheng, J. Gao, J.Z. Yu, Q.M. Wang\",\"doi\":\"10.1109/GROUP4.2004.1416654\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Intense near infrared emission was observed from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon. It was found that the addition of Al/sup 3+/ ions could remarkably improve the photoluminescence efficiency of Yb/sup 3+/-implanted SiO/sub 2/ film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416654\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

Al/sup 3+/和Yb/sup 3+/离子在硅表面共注入SiO/sub 2/薄膜，观察到强烈的近红外发射。结果表明，Al/sup 3+/离子的加入能显著提高Yb/sup 3+/-注入SiO/sub 2/薄膜的光致发光效率。未观察到励磁功率饱和，温度猝灭系数为2。

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Intense room temperature near infrared emission from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon

Intense near infrared emission was observed from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon. It was found that the addition of Al/sup 3+/ ions could remarkably improve the photoluminescence efficiency of Yb/sup 3+/-implanted SiO/sub 2/ film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.

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First IEEE International Conference on Group IV Photonics, 2004.

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