强电场对俄歇晶体管和基于场发射体的辐射探测器工作模式的影响

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004031

V. Kalganov, N. V. Mileshkina, E. V. Ostroumova

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引用次数: 0

摘要

本文研究了半导体在强电场作用下的光场发射特性，以及具有隧道透明绝缘体层的金属-绝缘体-半导体异质结构中隧道电子发射的平行研究。研究发现，半导体发射极尖端表面附近的自一致量子阱可以改变基于半导体场发射极的辐射探测器的光敏度光谱区域，使其光敏度显著提高。金属-绝缘体-半导体异质结构的研究使热电子从金属向半导体的发射成为可能，并使基于Al-SiO/sub - 2/-n-Si结构的运行速度最快的半导体双极晶体管——俄歇晶体管成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The influence of a strong electric field on the operating modes of the Auger transistor and the radiation detectors based on field emitters

The photo-field emission properties of semiconductors at a very strong electric field as well as the parallel investigation of tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunnel-transparent layer of an insulator have been studied. It was found that the self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation detectors, based on a semiconductor field emitter, and leads to the significant increase in their photosensitivity. The investigation of the metal-insulator-semiconductor heterostructures allows to realize the emission of hot electrons from the metal to the semiconductor, and makes possible to create the Auger-transistor based on the Al-SiO/sub 2/-n-Si structure which is the fastest operation semiconductor bipolar transistor.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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