{"title":"SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu异质结在可见光和近红外光谱中的光敏性","authors":"H. Mamedov, S. I. Amirova","doi":"10.1117/12.742555","DOIUrl":null,"url":null,"abstract":"Effective thin film heterojunctions SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu were manufactured by the method of electrochemical deposition. It is shown, that not treated heterojunctions possess the sensitivity only in visible region of spectrum. At illumination by the solar simulator with W = 100 mVt/sm2, not treated structures had the following photoelectric parameters: Isc ≈ 4.76 mA/cm2, 0.448 V, D* = 3 x 104 cm x Hz1/2Vt-1. Annealing of samples in air results to substantial increase of photosensitivity is found. After TA at t = 350°C and τ = 9 min, the sensitivity of samples in the 0.8 - 1.0 μm wavelength region sharply increase, that is due to formation of films Cu2Se at thermal annealing by means of diffusion of copper atoms from buffer contact through CdTe to Cd0.8Zn0.2S0.1Se0.9. Thus investigated structures possess following values of short circuit photocurrent, open circuit photovoltage and detectability: 1sc = 19,4 mA/cm2, Uoc = 637 mV, D* = 8 x 106 cm x Hz1/2 x Vt-1.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Photosensitivity of SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu heterojunctions in visible and near IR regions of spectrum\",\"authors\":\"H. Mamedov, S. I. Amirova\",\"doi\":\"10.1117/12.742555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effective thin film heterojunctions SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu were manufactured by the method of electrochemical deposition. It is shown, that not treated heterojunctions possess the sensitivity only in visible region of spectrum. At illumination by the solar simulator with W = 100 mVt/sm2, not treated structures had the following photoelectric parameters: Isc ≈ 4.76 mA/cm2, 0.448 V, D* = 3 x 104 cm x Hz1/2Vt-1. Annealing of samples in air results to substantial increase of photosensitivity is found. After TA at t = 350°C and τ = 9 min, the sensitivity of samples in the 0.8 - 1.0 μm wavelength region sharply increase, that is due to formation of films Cu2Se at thermal annealing by means of diffusion of copper atoms from buffer contact through CdTe to Cd0.8Zn0.2S0.1Se0.9. Thus investigated structures possess following values of short circuit photocurrent, open circuit photovoltage and detectability: 1sc = 19,4 mA/cm2, Uoc = 637 mV, D* = 8 x 106 cm x Hz1/2 x Vt-1.\",\"PeriodicalId\":160828,\"journal\":{\"name\":\"International Conference on Photoelectronics and Night Vision Devices\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Photoelectronics and Night Vision Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.742555\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Photoelectronics and Night Vision Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.742555","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photosensitivity of SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu heterojunctions in visible and near IR regions of spectrum
Effective thin film heterojunctions SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu were manufactured by the method of electrochemical deposition. It is shown, that not treated heterojunctions possess the sensitivity only in visible region of spectrum. At illumination by the solar simulator with W = 100 mVt/sm2, not treated structures had the following photoelectric parameters: Isc ≈ 4.76 mA/cm2, 0.448 V, D* = 3 x 104 cm x Hz1/2Vt-1. Annealing of samples in air results to substantial increase of photosensitivity is found. After TA at t = 350°C and τ = 9 min, the sensitivity of samples in the 0.8 - 1.0 μm wavelength region sharply increase, that is due to formation of films Cu2Se at thermal annealing by means of diffusion of copper atoms from buffer contact through CdTe to Cd0.8Zn0.2S0.1Se0.9. Thus investigated structures possess following values of short circuit photocurrent, open circuit photovoltage and detectability: 1sc = 19,4 mA/cm2, Uoc = 637 mV, D* = 8 x 106 cm x Hz1/2 x Vt-1.
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