一种分析SiGe:C hbt在射频大信号应力下性能的新方法

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160152

C. Wipf

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引用次数: 1

摘要

设计了一种集成振荡器，用于分析高性能SiGe:C hbt在射频大信号应力下的性能。在整个测试期间，可以很容易地监测振荡器核心hbt的性能。安排了一个复杂的测量设置以执行所有测试，而无需重新配置测量设置。首先给出了实验数据，证明了射频大信号应力引起的HBT 1/f噪声和基极电流行为的退化。

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A new method to analyze the behavior of SiGe:C HBTs under RF large signal stress

An integrated oscillator was designed to analyze the behavior of high-performance SiGe:C HBTs under RF large signal stress. The properties of the oscillator core HBTs can easily be monitored during the whole test period. A complex measurement setup was arranged to perform all tests without the need to reconfigure the measurement setup. First experimental data are presented demonstrating a degradation of the HBT 1/f noise and base current behavior caused by the applied RF large signal stress.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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