{"title":"微波场效应管——下一步是什么?","authors":"C. Liechti","doi":"10.1109/EUMA.1978.332511","DOIUrl":null,"url":null,"abstract":"Over the last decade, GaAs FET's have made dramatic advances in low-noise and efficient power amplification. These advances are highlighted and possible pathways for future developments are shown. Looking further ahead, it is important to realize that GaAs technology holds the key to microwave monolithic-integrated circuits.** \"Where are GaAs IC's today, and where do we go from here?\" These and related questions are briefly covered in this paper.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microwave FET's - What's Next?\",\"authors\":\"C. Liechti\",\"doi\":\"10.1109/EUMA.1978.332511\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Over the last decade, GaAs FET's have made dramatic advances in low-noise and efficient power amplification. These advances are highlighted and possible pathways for future developments are shown. Looking further ahead, it is important to realize that GaAs technology holds the key to microwave monolithic-integrated circuits.** \\\"Where are GaAs IC's today, and where do we go from here?\\\" These and related questions are briefly covered in this paper.\",\"PeriodicalId\":429268,\"journal\":{\"name\":\"1978 8th European Microwave Conference\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 8th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1978.332511\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Over the last decade, GaAs FET's have made dramatic advances in low-noise and efficient power amplification. These advances are highlighted and possible pathways for future developments are shown. Looking further ahead, it is important to realize that GaAs technology holds the key to microwave monolithic-integrated circuits.** "Where are GaAs IC's today, and where do we go from here?" These and related questions are briefly covered in this paper.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
