l波段高效开关模式GaN功率放大器的研究与设计

2009 International Conference on Advances in Computational Tools for Engineering Applications Pub Date : 2009-07-15 DOI:10.1109/ACTEA.2009.5227923

A. Ramadan, A. Martin, D. Sardin, T. Reveyrand, J. Nebus, P. Bouysse, L. Lapierre, J. Villemazet, S. Forestier

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引用次数: 5

摘要

已经开展了活动，以确定GaN HEMT的最佳电气操作条件，使开关模式功率放大器(F类，反F类和E类)在l波段的功率增加效率最大化。卫星无线电导航应用(伽利略)是目标。最大限度地提高功率附加效率对于节省直流功耗、减少自热效应和提高功率放大器的可靠性至关重要。在50V漏极偏置下，使用f类工作条件在2dB增益压缩下获得72%的最大功率附加效率(PAE)和40.3 dBm输出功率(Pout)，而使用E类工作条件在3dB增益压缩下获得75%的PAE和41.0 dBm输出功率。

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Study and design of high efficiency switch mode GaN power amplifiers at L-band frequency

Activities have been carried out to determine the best electrical operating conditions of GaN HEMT that enable maximum power added efficiency at L-Band for Switch Mode Power Amplifiers (class F, inverse class F and class E). Satellite Radio navigation applications (Galileo) are targeted. Maximization of power added efficiency is of prime importance to save DC power consumption, reduce self heating effects and improve reliability of power amplifiers. At 50V drain bias, a maximum power added efficiency (PAE) of 72% and 40.3 dBm output power (Pout) are obtained using class-F operating conditions at 2dB gain compression while a 75% PAE and 41.0 dBm Pout are obtained using class E at 3dB gain compression.

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2009 International Conference on Advances in Computational Tools for Engineering Applications

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