30W输出/ 60% PAE GaN功率放大器，x波段8%相对带宽

2016 Asia-Pacific Microwave Conference (APMC) Pub Date : 2016-12-01 DOI:10.1109/APMC.2016.7931272

Yoshifumi Kawamura, M. Hangai, T. Mizutani, Kenichi Tomiyama, K. Yamanaka

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引用次数: 5

摘要

本文提出了一种在0.15µm GaN HEMT工艺中实现的30w级x波段高效内匹配场效应管(IMFET)。在8%的相对带宽下，所制备的HPA的输出功率为28 ~ 31.5 W，功率增加效率为57 ~ 60%，增益为11 ~ 12.5 db。据作者所知，这是所有报道中最高水平的表现之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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30W output / 60% PAE GaN power amplifier at X-band 8% relative bandwidth

In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 µm GaN HEMT process is presented. The fabricated HPA has achieved the Pout of 28–31.5 W and the PAE (power added efficiency) of 57–60% and the gain of 11–12.5dB over 8% relative bandwidth. To the authors' knowledge, this is one of the highest level performance among ever-reported ones.

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2016 Asia-Pacific Microwave Conference (APMC)

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