变形场中KI晶体辐射缺陷形成机理

K. Shunkeyev, L. Myasnikova, A. Maratova, K. Bizhanova
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引用次数: 1

摘要

研究辐射缺陷的形成机制,以保证光学材料在辐射、温度和各种变形应力的影响下的透明度,是当前迫切需要解决的问题。为此,研究了光阳离子场(Na)降低KI、KCl和KBr晶体晶格对称性时卤素中心(V2、V3、V4A)的形成机制,以及晶体的塑性和弹性变形。该晶体在90 K等剂量模式下x射线照射3小时,预掺杂Na离子,在室温下发生塑性变形(4%),在90 K下发生弹性变形(1.5%)。通过光阳离子降低KI, KCl和KBr晶体的晶格对称性和塑性变形导致辐射缺陷形成增加,弹性变形-导致辐射缺陷形成减少,从而增加发光。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mechanisms of Radiation Defect Formation in the KI Crystal in the Deformation Field
The study of the mechanisms of formation of radiation defects to ensure the transparency of optical materials under the influence of radiation, temperature and stress of various types of deformation is an urgent task at the present time. For this purpose, the mechanisms of formation of halogen centers (V2, V3, V4A) when the lattice symmetry is lowered by the light cation field (Na), plastic and elastic deformation in a KI, KCl and KBr crystals are studied. Absorption spectra of this crystals under X-ray irradiation in the isodose mode for 3 hours at 90 K, pre-doped with Na ions, undergo plastic deformation (4%) at room temperature and elastic deformation (1.5%) at 90 K. Lowering the lattice symmetry by light cations and plastic deformation of the KI, KCl and KBr crystals leads to an increase in radiation defect formation, elastic deformation – leads to a decrease in radiation defect formation, and therefore to an increase in luminescence.
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