M. Pourakbar, Raheleh Eslampanah, M. Faulkner, Markus Törmänen, H. Sjöland
{"title":"SOI技术中的SDR双工滤波器","authors":"M. Pourakbar, Raheleh Eslampanah, M. Faulkner, Markus Törmänen, H. Sjöland","doi":"10.1109/AUSMS.2014.7017350","DOIUrl":null,"url":null,"abstract":"A Software-Defined Radio (SDR) mobile handset must cover multiple frequency bands with different frequency division duplex distances. This calls for an adaptive duplexer, which needs a low-isolation device to create an initial isolation. Such a device is implemented in a 130 nm Silicon-on-Insulator (SOI) process. Its performance benefits from a high-Q laminated PCB inductor which has a measured inductance and Q-factor at 2 GHz of 1.19 nH and 125, respectively. The tunable low-isolation device provides an isolation exceeding 30 dB at both transmit and receive frequencies of each targeted four LTE frequency bands. The insertion loss from PA to antenna is below 2 dB in LTE band I. The implemented circuit occupies an area of 2.4 mm2.","PeriodicalId":108280,"journal":{"name":"2014 1st Australian Microwave Symposium (AMS)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An SDR duplex filter in SOI technology\",\"authors\":\"M. Pourakbar, Raheleh Eslampanah, M. Faulkner, Markus Törmänen, H. Sjöland\",\"doi\":\"10.1109/AUSMS.2014.7017350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Software-Defined Radio (SDR) mobile handset must cover multiple frequency bands with different frequency division duplex distances. This calls for an adaptive duplexer, which needs a low-isolation device to create an initial isolation. Such a device is implemented in a 130 nm Silicon-on-Insulator (SOI) process. Its performance benefits from a high-Q laminated PCB inductor which has a measured inductance and Q-factor at 2 GHz of 1.19 nH and 125, respectively. The tunable low-isolation device provides an isolation exceeding 30 dB at both transmit and receive frequencies of each targeted four LTE frequency bands. The insertion loss from PA to antenna is below 2 dB in LTE band I. The implemented circuit occupies an area of 2.4 mm2.\",\"PeriodicalId\":108280,\"journal\":{\"name\":\"2014 1st Australian Microwave Symposium (AMS)\",\"volume\":\"125 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 1st Australian Microwave Symposium (AMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AUSMS.2014.7017350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 1st Australian Microwave Symposium (AMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AUSMS.2014.7017350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Software-Defined Radio (SDR) mobile handset must cover multiple frequency bands with different frequency division duplex distances. This calls for an adaptive duplexer, which needs a low-isolation device to create an initial isolation. Such a device is implemented in a 130 nm Silicon-on-Insulator (SOI) process. Its performance benefits from a high-Q laminated PCB inductor which has a measured inductance and Q-factor at 2 GHz of 1.19 nH and 125, respectively. The tunable low-isolation device provides an isolation exceeding 30 dB at both transmit and receive frequencies of each targeted four LTE frequency bands. The insertion loss from PA to antenna is below 2 dB in LTE band I. The implemented circuit occupies an area of 2.4 mm2.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
