高静水压力下的fir检测

1981 International Conference on Submillimeter Waves and Their Applications Pub Date : 1981-12-01 DOI:10.1109/ICSWA.1981.9335225

U. Steigenberger, M. Eremets, S. G. Lapin, M. Shirokov, E. A. Vinogradov

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引用次数: 0

摘要

亨塞尔等a1。[1]证明了带内磁谱中光学跃迁的压力依赖性研究是分析半导体电子结构的一个非常有力的工具。这些作者施加了单轴应力。通常，补充静力学应力的应用可以提供更大范围的信息。

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FIR-Detection in the Presence of High Hydrostatic Pressure

Hensel et a1. [1] demonstrated that the investigation of the pressure dependence of optical transitions in intraband magneto-spectroscopy is an extremely powerful tool in the analysis of the electronic structure of semiconductors. These authors applied uniaxial stress. Often the application of the complementary hydrostatics tress promises a larger range of information.

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1981 International Conference on Submillimeter Waves and Their Applications

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