在3hz和100khz之间的QHE状态下,不同gaas基样品的剩余纵向电阻率的交流测量

F. Piquemal, G. Trapon, G. Genevès
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引用次数: 1

摘要

在频率高达100 kHz、1.2 K和4.3 K、i=1.2和4的平台上,对三个QHE样品的纵向电阻率/spl rho//sub xx/进行了交流测量。初步结果表明,频率与/spl rho//sub xx/、/spl rho//sub xx//sup min/的最小值残差值有关,但与/spl rho//sub xx//sup min/所处的磁密度范围宽度无关,或者几乎不相关。在1 kHz左右的频域,/spl rho//sub //sup min/值在1.2 K时位于0.4 m/spl ω /至8 m/spl ω /之间,具体取决于所使用的平台和样本。它保证了霍尔电阻的预期量化,/spl rho//sub xy/=R/sub H/(i),在1 / 10/sup 8/的水平上完成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
AC measurements of the residual longitudinal resistivity of different GaAs-based samples in the QHE regime between 3 Hz and 100 kHz
AC measurements of the longitudinal resistivity, /spl rho//sub xx/, of three QHE samples were made at frequencies up to 100 kHz, at 1.2 K and 4.3 K, on the i=1.2 and 4 plateaus. Preliminary results show a frequency dependence on the residual value of the minimum of /spl rho//sub xx/, /spl rho//sub xx//sup min/, but not, or very few on the width of the magnetic flux density range over which /spl rho//sub xx//sup min/ takes place. In the frequency domain around 1 kHz, the /spl rho//sub xx//sup min/ values lie within 0.4 m/spl Omega/ to 8 m/spl Omega/ at 1.2 K, depending on plateaus and samples used. It promises an expected quantization of the Hall resistance, /spl rho//sub xy/=R/sub H/(i), to be complete at a level of one part in 10/sup 8/.<>
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