多晶Ga2O3薄膜阴极发光特性及其在UV平板光源中的应用

2020 33rd International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2020-07-01 DOI:10.1109/IVNC49440.2020.9203164

Jing Yin, Manni Chen, Libin Wang, Xiuqing Cao, J. She, S. Deng, N. Xu, Jun Chen

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引用次数: 2

摘要

采用电子束蒸发和后退火工艺制备了多晶氧化镓薄膜。阴极发光测量表明，氧化镓薄膜的发射峰范围在300 ~ 650 nm。以氧化镓薄膜为阳极，采用ZnO纳米线场发射阵列制备了平板紫外光源。

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Cathodoluminescent Properties of polycrystalline Ga2O3 thin film and its application UV flat panel light source

Polycrystalline gallium oxide thin film was prepared using electron-beam evaporation and a post-annealing treatment. Cathodoluminescent measurement show the gallium oxide thin film has emission peaks ranging from 300 to 650 nm. Using gallium oxide thin film anode, a flat panel UV light source was fabricated by using ZnO nanowires field emitter arrays.

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2020 33rd International Vacuum Nanoelectronics Conference (IVNC)

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